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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdx62/a/b/c description collector current -i c = - 8a high dc current gain-h fe = 1000(min)@ i c = -3a complement to type bdx63/a/b/c applications designed for audio output stages and general amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdx62 -80 BDX62A -100 bdx62b -120 v cbo collector-base voltage bdx62c -140 v bdx62 -60 BDX62A -80 bdx62b -100 v ceo collector-emitter voltage bdx62c -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i cm collector current-peak -12 a i b b base current-continuous -0.15 a p c collector power dissipation @ t c =25 90 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.94 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdx62/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx62 -60 BDX62A -80 bdx62b -100 v ceo(sus) collector-emitter sustaining voltage bdx62c i c = -100ma ;i b =0 -120 v v ce(sat) collector-emitter saturation voltage i c = -3a; i b = -12ma b -2 v v be( on ) base-emitter on voltage i c = -3a ; v ce = -3v -2.5 v i ceo collector cutoff current v ce = 1 / 2 v ceo ; i b = 0 -0.2 ma i cbo collector cutoff current v cb = v cbomax ;i e = 0 -0.2 ma bdx62 v cb = -40v;i e = 0;t j = 200 BDX62A v cb = -50v;i e = 0;t j = 200 bdx62b v cb = -60v;i e = 0;t j = 200 i cbo collector cutoff current bdx62c v cb = -70v;i e = 0;t j = 200 -2 ma i ebo emitter cutoff current v eb = -5v; i c =0 -5 ma h fe-1 dc current gain i c = -0.5a ; v ce = -3v 1500 h fe-2 dc current gain i c = -3a ; v ce = -3v 1000 h fe-3 dc current gain i c = -8a ; v ce = -3v 750 c ob output capacitance i e = 0 ; v cb = -10v; f test = 1mhz 100 pf switching times t on turn-on time 0.5 s t off turn-off time i c = -3a; i b1 = -i b2 = -12ma 2.5 s isc website www.iscsemi.cn 2 |
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